Total-dose radiation effects data for semiconductor devices

1985 supplement

Publisher: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, Publisher: National Technical Information Service, distributor in Pasadena, Calif, [Springfield, Va

Written in English
Published: Downloads: 883
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  • Aerospace environments.,
  • Electrical engineering.,
  • Integrated circuits.,
  • Radiation damage.,
  • Radiation dosage.,
  • Radiation effects.,
  • Semiconductor devices.

Edition Notes

Other titlesTotal dose radiation effects data for semiconductor devices.
StatementKeith E. Martin ... [et al.].
SeriesNASA contractor report -- NASA CR-179746.
ContributionsMartin, Keith E., Jet Propulsion Laboratory (U.S.)
The Physical Object
Pagination1 v.
ID Numbers
Open LibraryOL15419292M

Therefore, before the results for total dose tests can be considered definitive, the Enhanced Low Dose Rate Sensitivity (ELDRS) of these devices has to be assessed. This is a well-known problem in bipolar technologies where higher radiation damage is seen in bipolar transistors when they are irradiated at low dose rates [4], [5].Cited by: RadiationEffectsDamage - 3 - K. E. Holbert 2. General Radiation Effects The general types of radiation effects on materials can be categorized into (1) Impurity Production, that is, transmutation of nuclei into other nuclei which themselves may be radioactive; this mechanism is caused by neutrons through fission and activation (capture). 5 BOOK: N. Pushpa and A. P. Gnana Prakash, Application of Pelletron Accelerator to Study Total Dose Radiation Effects on MOS and Bipolar Devices, Lambert Academic Publishing, Germany (ISBN: ), RESEARCH PUBLICATIONS: Refereed Journal Papers. A radiation hardened NMOS transistor structure suited for application to radiation hardened CMOS devices, and the method for manufacturing it is disclosed. The new transistor structure is characterized by "P" doped guard bands running along and immediately underlying the two bird's beak regions perpendicular to the gate. The transistor and the CMOS structure incorporating it Cited by:

Total Ionizing Dose Effects in MOS Oxides and Devices T. R. Oldham, Fellow, IEEE, and F. B. McLean, Fellow, IEEE Abstract— This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and inter-face trap formation. Table of Contents – Radiation Testing Page Test Philosophy 31 Complete total dose radiation data is sup- National’s Radiation Effects Laboratories National Semiconductor operates radiation effects labora-tories (REL) in South Portland, Maine; and Santa Clara, California. presentations and a Radiation Effects Data Workshop. The Workshop consists of 27 pa-pers emphasizing radiation effects data on elec-tronic devices and systems, and descriptions of new simulation and radiation test facilities. In addition, there are three outstanding invited talks that should be of general interest to atten-dees and their. Radiation performance of new semiconductor power devices for the LHC experiment upgrades C. Abbate and is likely due to radiation effects in the layers introduced to engineer the positive threshold the total dose sensitivity of GaN HEMTs was.

in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits ISO/ASTM Practice for Use of a Radiochromic Film Dosimetry System Military Specifications: MIL-STD, Method , Ionizing Radiation (Total Dose) Test Method3 MIL-STD, Method , Steady-State Total Dose Ir-radiation Procedure3. Test results for several newly available Hi-Rel total dose hardened power MOSFETs are presented. The safe-operating-area (SOA) of several devices were determined with Ag and Xe ions having incident LETs of and MeV cm2/mg, respectively. Test results show these devices are comparable to currently available total dose hardened technology. Total dose effects Total dose effects in semiconductor devices depend on the creation of electron-hole pairs within dielectric layers (oxides, nitrides etc.) and subsequent generation of traps at or near the interface with the semiconductor or of trapped charge in the dielectric. This can produce a variety of device effectsFile Size: KB. IEEE Radiation Effects Data Workshop 96–99 Google Scholar Mathew SJ, Niu G, Clark SD, Cressler JD, Palmer MJ, Dubbelday WB () radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) tech-. by: 1.

Total-dose radiation effects data for semiconductor devices Download PDF EPUB FB2

The item Total-dose radiation effects data for semiconductor devices, supplement, Keith E. Martin [and others] represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in Indiana State Library.

Steady-state, total-dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. All tests were conducted at File Size: 6MB. Physical mechanisms governing the response of CMOS devices to ionizing radiation are reviewed.

New techniques for characterizing the radiation response of MOS transistors are presented. These techniques are applied towards optimizing the radiation hardness of a Si-gate CMOS process. Get this from a library. Total-dose radiation effects data for semiconductor devices: supplement.

[Keith E Martin; Jet Propulsion Laboratory (U.S.);]. Radiation (Total Dose) Effects Testing of Semiconductor Devices, Active Standard ASTM F Developed by Subcommittee: F, Book of Standards Volume: ,File Size: KB. This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below rd(SiO 2)/ tests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet.

This radiation deposits energy by causing ionization in the material. The ionization can change the charge excitation, charge transport, bonding, and decomposition properties of the material, and therefore, the device parameters. Total dose is the cumulative ionizing radiation that an electronic device receives over a specified period of time.

Total Dose Irradiation Effects on Bipolar Transistors Ionizing radiation damage in semiconductor devices is mainly the result of charges trapped on or near the sur-faces of their insulating layers and interfaces. In bipolar devices, a trapped charge at their surface layers produce inversion layers that expand the effective surface area.

Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects Manufacturer: CRC Press.

@article{osti_, title = {Analytical models for total dose ionization effects in MOS devices.}, author = {Campbell, Phillip Montgomery and Bogdan, Carolyn W}, abstractNote = {MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides.

Under positive bias holes created in the gate oxide will transport to the Si /. Radiation Effects on Electronics Simple Concepts and New Challenges Kenneth A.

LaBel @ Co-Manager, NASA Electronic Parts and Packaging (NEPP) Program Group Leader, Radiation Effects and Analysis Group (REAG), NASA/GSFC Project Technologist, Living With a Star (LWS) Space Environment Testbeds (SET). She is currently a postdoctoral researcher in the Department of Information Engineering at the University of Padova.

Her research concerns radiation and reliability effects on electronic devices, especially on nonvolatile semiconductor memories. Marta has authored/coauthored two book chapters and more than 90 journal and conference : CRC Press. interested in using PSpice for radiation effects analyses.

Dose-Rate Effects When semiconductor devices such as diodes, transistors, and integrated circuits are exposed to ionizing radiation, such as gamma-rays or X-rays, hole-electron pairs are generated within the semiconductor material.

These free carriers result in theFile Size: 27KB. Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-Oxide-Semiconductor Technologies by Ivan Sanchez Esqueda A Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy Approved April by the Graduate Supervisory Committee: Hugh Barnaby, Chair Gennady Gildenblat Keith Holbert.

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation (particle radiation and high-energy electromagnetic radiation), especially for environments in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear.

Total dose and dose rate effects; silicon detectors In this paragraph emphasi s will be on new semiconductor detectors such as CMOS sensors that are now good candidates for. Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review Article (PDF Available) in Russian Microelectronics 32(1).

Both MOS and bipolar devices and associated circuits are prone to the radiation effects of either short-term or long-term nature. Changes in MOSFET parameters upon radiation exposure are manifested in CMOS circuits as variations in low and high digital logic levels, a decrease in output current, lengthening of propagation delay and upswing of.

This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below rd(SiO 2)/s.

These tests and analysis will be appropriate to assist in the determination of the ability of. The effects of abundant lower-energy particles are uniform through the volume of the semiconductor chip, while the much less abundant high-energy heavy ions (known somewhat incorrectly as cosmic.

F Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices. Military Standards. MIL-STD Test Methods for Semiconductor Devices.

MIL-STD Test Method Standard Microcircuits. Other Documents. DASIACSR,April, Guide to Nuclear Weapons Effects Simulation Facilities and Techniques Available from Defense. Accurate numerical models are necessary for better analysis of radiation effects and design of radiation tolerant devices.

Numerical models and adaptive dynamic 3D mesh generation presented in this paper enable efficient simulations of transient semiconductor device response to realistic multi-branched track, produced by ionizing particle and Cited by: The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in.

The study of radiation tolerance of semiconductor devices up to Mrad of total dose takes longer time with conventional 60Co gamma, proton and electron irradiation facilities and the effects due to these radiations are well understood.

Hence it is important to study the effects of heavy ion irradiation on various semiconductor : A.P. Gnana Prakash, N. Pushpa. (source: Nielsen Book Data) Summary Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices.

The book also offers valuable insight into. Request Expert. Expert is a recognized expert in testing, modeling, and analysis of radiation effects in microelectronics.

His expertise includes displacement damage from neutrons and protons, ionizing radation effects from gammas, electrons and protons, prompt dose rate effects from x-rays and single event effects from protons and heavy ions.

The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III–V materials, thin-film piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as Cited by: Radiation Effects in Advanced Semiconductor Materials and Devices (Springer Series in Materials Science) C.

Claeys, E. Simoen This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments.

Ron has had a long history of important technical contributions to radiation effects research and to the survivability of critical defense and space systems. This includes testing, analysis, and modeling of dose rate, total dose, displacement damage, and single-event effects in semiconductor devices and circuits.

Total dose testing was performed on biased and unbiased InP devices using a 60Co source. Photodiodes were tested to a total dose of more than 17 Mrad(Si) and heterojunction bipolar transistors were tested to total doses of more than Mrad(Si) and krad(Si) at dose rates of rad(Si)/s and rad(Si)/s respectively.

Testing for Total Dose effects is generally done with a Cobalt source. Although it generates primarily gamma radiation, it does give good correlation to Total Dose performance, especially for MOS transistors.

Single Event Effects Single Event Effects (SEE) are caused by high-energy heavy nuclei (Cosmic Rays) passing through semiconductors.Institute for Space and Defense Electronics The mission of the Institute for Space and Defense Electronics is to contribute to the design and analysis of radiation-hardened electronics, the development of test methods and plans for assuring radiation hardness and the development of solutions to system-specific problems related to radiation effects.Ionizing Radiation Effects in Electronics: From Memories to Imagers: : Bagatin, Marta, Gerardin, Simone: Libri in altre lingue.

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